The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Mar. 05, 2019
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Alexander Shpunt, Portola Valley, CA (US);

Raviv Erlich, Kibbutz Beit Nir, IL;

Zafrir Mor, Ein Habsor, IL;

Assignee:

APPLE INC., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01C 3/08 (2006.01); G06F 3/01 (2006.01); G01J 1/04 (2006.01); H01S 3/00 (2006.01); B23P 19/04 (2006.01); G01S 17/10 (2020.01); G01S 17/42 (2006.01); G01S 17/89 (2020.01); G01S 7/481 (2006.01); G01S 7/486 (2020.01); H01S 5/40 (2006.01); H01S 5/42 (2006.01); H01S 5/02253 (2021.01); H01S 5/02325 (2021.01); G06T 15/00 (2011.01); G01J 1/44 (2006.01); G02B 27/09 (2006.01); G01S 7/4865 (2020.01); H01S 5/02257 (2021.01);
U.S. Cl.
CPC ...
G06F 3/011 (2013.01); B23P 19/04 (2013.01); G01J 1/0411 (2013.01); G01J 1/44 (2013.01); G01S 7/4812 (2013.01); G01S 7/4817 (2013.01); G01S 7/4865 (2013.01); G01S 7/4868 (2013.01); G01S 17/10 (2013.01); G01S 17/42 (2013.01); G01S 17/89 (2013.01); G02B 27/0961 (2013.01); G06T 15/00 (2013.01); H01S 3/0071 (2013.01); H01S 5/02253 (2021.01); H01S 5/02325 (2021.01); H01S 5/4012 (2013.01); H01S 5/4075 (2013.01); H01S 5/423 (2013.01); G01J 2001/4466 (2013.01); H01S 5/02257 (2021.01); Y10T 29/49002 (2015.01);
Abstract

A beam generating device includes a semiconductor substrate, having an optical passband. A first array of vertical-cavity surface-emitting lasers (VCSELs) is formed on a first face of the semiconductor substrate and are configured to emit respective laser beams through the substrate at a wavelength within the passband. A second array of microlenses is formed on a second face of the semiconductor substrate in respective alignment with the VCSELs so as to transmit the laser beams generated by the VCSELs. The VCSELs are configured to be driven to emit the laser beams in predefined groups in order to change a characteristic of the laser beams.


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