The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
May. 17, 2021
Infineon Technologies Ag, Neubiberg, DE;
Stephan Gerhard Albert, Munich, DE;
Marten Oldsen, Anzing, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for producing a MEMS device comprises fabricating a first semiconductor layer and selectively depositing a second semiconductor layer over the first semiconductor layer, wherein the second semiconductor layer comprises a first part composed of monocrystalline semiconductor material and a second part composed of polycrystalline semiconductor material. The method furthermore comprises structuring at least one of the semiconductor layers, wherein the monocrystalline semiconductor material of the first part and underlying material of the first semiconductor layer form a spring element of the MEMS device and the polycrystalline semiconductor material of the second part and underlying material of the first semiconductor layer form at least one part of a comb drive of the MEMS device.