The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Dec. 26, 2019
Applicant:

Zhongke Jingyuan Electron Limited, Beijing, Beijing, CN;

Inventors:

Lei Jiang, Beijing, CN;

Yan Zhao, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/2251 (2018.01);
U.S. Cl.
CPC ...
G01N 23/2251 (2013.01); G01N 2223/07 (2013.01); G01N 2223/3308 (2013.01); G01N 2223/418 (2013.01); G01N 2223/507 (2013.01); G01N 2223/6116 (2013.01); G01N 2223/646 (2013.01);
Abstract

An electron beam detection apparatus for a semiconductor device and an electron beam detection assembly are disclosed, the electron beam detection apparatus including a stage, which is configured to carry and hold the semiconductor device at a top surface of the stage, and is translatable in two directions orthogonal to each other, an aiming device, configured to determine a position of the semiconductor device in a coordinate system of the electron beam detection apparatus by capturing an image of the semiconductor device, the aiming device provided with a first field of view and a first optical axis, and an electron beam detection device, configured to detect an emergent electron beam exiting the semiconductor device by projecting an electron beam to the semiconductor device, the electron beam detection device provided with a second field of view and a second optical axis which is not consistent with the first optical axis.


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