The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Mar. 30, 2020
Applicant:
Ngk Insulators, Ltd., Nagoya, JP;
Inventors:
Assignee:
NGK INSULATORS, LTD., Nagoya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 30/072 (2023.01); C30B 29/30 (2006.01); H03H 3/08 (2006.01); H03H 9/25 (2006.01); H10N 30/20 (2023.01); H10N 30/086 (2023.01); H10N 30/88 (2023.01); H10N 30/853 (2023.01);
U.S. Cl.
CPC ...
H10N 30/072 (2023.02); C30B 29/30 (2013.01); H03H 3/08 (2013.01); H03H 9/25 (2013.01); H10N 30/086 (2023.02); H10N 30/20 (2023.02); H10N 30/8542 (2023.02); H10N 30/88 (2023.02);
Abstract
A bonded body includes a supporting substrate, silicon oxide layer provided on the supporting substrate, and a piezoelectric material substrate provided on the silicon oxide layer and composed of a material selected from the group consisting of lithium niobate, lithium tantalate and lithium niobate-lithium tantalite. A nitrogen concentration at an interface between the piezoelectric material substrate and silicon oxide layer is higher than a nitrogen concentration at an interface between the silicon oxide layer and the supporting substrate.