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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11700733 B1

PDFFull Text
Date of Patent:
Jul. 11, 2023

Filed:

Jun. 03, 2021

Photoelectric conversion element and solid-state imaging device

Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Yuta Hasegawa, Kanagawa, JP;

Nobuyuki Matsuzawa, Tokyo, JP;

Yoshiaki Obana, Kanagawa, JP;

Ichiro Takemura, Kanagawa, JP;

Norikazu Nakayama, Kanagawa, JP;

Masami Shimokawa, Kanagawa, JP;

Tetsuji Yamaguchi, Kanagawa, JP;

Iwao Yagi, Kanagawa, JP;

Hideaki Mogi, Kanagawa, JP;

Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;

Attorney:

Sheridan Ross P.C.

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Neil R Prasad

Int. Cl.
CPC ...
H10K 39/32 (2023.01); H01L 27/146 (2006.01); H01L 31/10 (2006.01); H10K 19/20 (2023.01); H10K 30/30 (2023.01); H10K 71/16 (2023.01); H10K 85/60 (2023.01); H10K 85/20 (2023.01); H10K 85/30 (2023.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H01L 27/146 (2013.01); H01L 31/10 (2013.01); H10K 19/20 (2023.02); H10K 30/353 (2023.02); H10K 71/164 (2023.02); H10K 85/631 (2023.02); H01L 27/14647 (2013.01); H01L 27/14689 (2013.01); H10K 30/30 (2023.02); H10K 85/211 (2023.02); H10K 85/215 (2023.02); H10K 85/322 (2023.02); H10K 85/622 (2023.02); H10K 85/626 (2023.02); H10K 85/633 (2023.02); H10K 85/6572 (2023.02); H10K 85/6576 (2023.02); Y02E 10/549 (2013.01);
Abstract

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

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