The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Feb. 02, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jin Sub Kim, Seoul, KR;

Jun Kwan Kim, Seoul, KR;

Woo Choel Noh, Hwaseong-si, KR;

Kyoung-Hee Kim, Hwaseong-si, KR;

Ik Soo Kim, Yongin-si, KR;

Yong Jin Shin, Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10852 (2013.01); H01L 27/10897 (2013.01);
Abstract

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric film extending on the lower electrode along a side surface of the lower electrode that is perpendicular to the substrate, an upper electrode on the capacitor dielectric film, an interface layer including a hydrogen blocking film and a hydrogen bypass film on the upper electrode, the hydrogen blocking film including a conductive material, and a contact plug penetrating the interface layer and electrically connected to the upper electrode.


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