The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Mar. 05, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seungjae Jung, Suwon-si, KR;

Kwangho Park, Cheonan-si, KR;

Jaehoon Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/03 (2023.02); H10B 12/05 (2023.02);
Abstract

A semiconductor memory device, including a first semiconductor pattern, and a second semiconductor pattern separated from the first semiconductor pattern in a vertical direction; a first bit line electrically connected to a first source/drain region of the first semiconductor pattern, and a second bit line electrically connected to a first source/drain region of the second semiconductor pattern; a word line structure in contact with the first semiconductor pattern and the second semiconductor pattern; and a first data storage element electrically connected to a second source/drain region of the first semiconductor pattern, and a second data storage element electrically connected to a second source/drain region of the second semiconductor pattern, wherein the first semiconductor pattern and the second semiconductor pattern are monocrystalline, and wherein a crystal orientation of the first semiconductor pattern is different from a crystal orientation of the second semiconductor pattern.


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