The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Sep. 17, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Sony Varghese, Manchester, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H10B 12/053 (2023.02); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02); H10B 12/488 (2023.02);
Abstract

Disclosed are DRAM devices and methods of forming DRAM devices. One non-limiting method may include providing a device, the device including a plurality of angled structures formed from a substrate, a bitline and a dielectric between each of the plurality of angled structures, and a drain disposed along each of the plurality of angled structures. The method may further include providing a plurality of mask structures of a patterned masking layer over the plurality of angled structures, the plurality of mask structures being oriented perpendicular to the plurality of angled structures. The method may further include etching the device at a non-zero angle to form a plurality of pillar structures.


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