The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

May. 31, 2022
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Te-Yin Chen, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/485 (2006.01); H10B 12/00 (2023.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H10B 12/0335 (2023.02); H01L 21/7682 (2013.01); H01L 21/76885 (2013.01); H10B 12/315 (2023.02); H10B 12/34 (2023.02);
Abstract

The present application provides a memory device with an air gap. The memory device includes an active region disposed in a substrate; a word line disposed in the substrate, wherein the word line is intersected with the active region; a contact structure disposed on the substrate, wherein the contact structure is located at a side of the word line, and electrically connected to the active region; a first conductive layer and a second conductive layer disposed over the substrate, wherein the contact structure is covered by the first and second conductive layers; a conductive pillar overlapped with and electrically connected to the contact structure; a landing pad covers and electrically connects to the conductive pillar, wherein a sidewall of the conductive pillar is laterally recessed from a sidewall of the landing pad; and a dielectric layer laterally surrounding the conductive pillar and the landing pad.


Find Patent Forward Citations

Loading…