The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Jan. 09, 2020
Applicant:
Omnivision Technologies, Inc., Santa Clara, CA (US);
Inventor:
Seong Yeol Mun, Santa Clara, CA (US);
Assignee:
OmniVision Technologies, Inc., Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H04N 25/63 (2023.01); H01L 27/146 (2006.01); H04N 25/75 (2023.01);
U.S. Cl.
CPC ...
H04N 25/63 (2023.01); H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14689 (2013.01); H01L 29/513 (2013.01); H04N 25/75 (2023.01);
Abstract
A pixel cell includes a nitrogen-implanted region at a semiconductor material-gate oxide proximate interface located in a region above a photodiode. The pixel cell is further devoid of implanted nitrogen in channel regions of a plurality of pixel transistors. Thus, Si—N bonds are formed at the semiconductor material-gate oxide interface in the region above the photodiode, while the channel regions are protected from nitrogen implantation at the semiconductor material-gate oxide interface. Methods of forming the pixel cell are also described.