The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Dec. 13, 2021
Applicant:

Feng Chia University, Taichung, TW;

Inventors:

Jin-Fa Chang, Miaoli County, TW;

Yo-Sheng Lin, Taichung, TW;

Assignee:

FENG CHIA UNIVERSITY, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/16 (2006.01); H03F 1/22 (2006.01);
U.S. Cl.
CPC ...
H03F 3/16 (2013.01);
Abstract

A transistor comprises a drain, a gate, a source, a body terminal and a body resistance. The drain is connected to a supply voltage line to receive a supply voltage. The gate is connected to a control voltage line to receive a control voltage. The source is connected to a input line to receive a input radio frequency signal. The body terminal is connected to the drain. The body resistance is disposed between the drain and the body terminal. By the foregoing configuration, the leakage current of the substrate is reduced and the threshold voltage of the transistor is reduced to conform to the present low power design.


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