The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

May. 28, 2021
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Tzu-Chieh Hsu, Hsinchu, TW;

Yi-Wen Huang, Hsinchu, TW;

Shou-Lung Chen, Hsinchu, TW;

Hsin-Kang Chen, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01S 5/42 (2006.01); H01L 33/60 (2010.01); H01L 33/20 (2010.01); H01L 33/62 (2010.01); H01L 33/38 (2010.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/20 (2013.01); H01L 33/385 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01S 5/0216 (2013.01); H01S 5/0425 (2013.01); H01S 5/04254 (2019.08); H01S 5/04256 (2019.08); H01S 5/423 (2013.01); H01S 5/0217 (2013.01); H01S 5/04257 (2019.08); H01S 5/18305 (2013.01); H01S 5/18311 (2013.01); H01S 2301/176 (2013.01);
Abstract

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having a first side and a second side opposite to the first side; a first optical element at the first side of the substrate; and a semiconductor stack on the substrate. The semiconductor stack includes a first reflective structure; a second reflective structure; a cavity region between the first reflective structure and the second reflective structure and having a first surface and a second surface opposite to the first surface; and a confinement layer in one of the second reflective structure and the first reflective structure. The semiconductor device further includes a first electrode and a second electrode on the first surface.


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