The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Oct. 01, 2020
Applicant:
Qromis, Inc., Santa Clara, CA (US);
Inventors:
Vladimir Odnoblyudov, Danville, CA (US);
Steve Lester, Palo Alto, CA (US);
Ozgur Aktas, Pleasanton, CA (US);
Assignee:
QROMIS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 21/02002 (2013.01); H01L 21/0217 (2013.01); H01L 21/0242 (2013.01); H01L 21/0245 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02488 (2013.01); H01L 21/02499 (2013.01); H01L 21/02505 (2013.01); H01L 21/02634 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/267 (2013.01);
Abstract
A method for making a multilayered device on an engineered substrate having a substrate coefficient of thermal expansion includes growing a buffer layer on the engineered substrate, and growing a first epitaxial layer on the buffer layer. The first epitaxial layer is characterized by an epitaxial coefficient of thermal expansion substantially equal to the substrate coefficient of thermal expansion.