The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Oct. 21, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Beomjin Park, Hwaseong-si, KR;
Dongil Bae, Seongnam-si, KR;
Daewon Kim, Hwaseong-si, KR;
Taeyoung Kim, Hwaseong-si, KR;
Joohee Jung, Seoul, KR;
Jaehoon Shin, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes an active pattern extending on a substrate in a first direction, divided into a plurality of regions by a separation region, and having a first edge portion exposed toward the separation region; first, second and third channel layers vertically separated and sequentially disposed on the active pattern; a first gate electrode extending in a second direction, intersecting the active pattern, and surrounding the first, second and third channel layers; source/drain regions disposed on the active pattern, on at least one side of the first gate electrode, and contacting the first, second and third channel layers; a semiconductor structure including first semiconductor layers and second semiconductor layers alternately stacked on the active pattern, and having a second edge portion exposed toward the separation region; and a blocking layer covering at least one of an upper surface, side surfaces, or the second edge portion, of the semiconductor structure.