The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Oct. 06, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Chiang-Lin Shih, New Taipei, TW;

Pei-Jhen Wu, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 24/17 (2013.01); H01L 24/33 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes preparing a first group of wafers having a plurality of first semiconductor dies embedded in a first photosensitive material layer; forming a plurality of first through vias in the first photosensitive material layer; attaching at least two of the first group of wafers using a first adhesive layer to form a first structure; preparing a second group of wafers having a plurality of second semiconductor dies embedded in a second photosensitive material layer; forming a plurality of second through vias in the second photosensitive material layer; attaching at least two of the second group of wafers using a second adhesive layer to form a second structure; and connecting the first structure to the second structure with a plurality of first metal bumps.


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