The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Mar. 10, 2021
Applicant:
L'air Liquide, Société Anonyme Pour L'etude ET L'exploitation Des Procédés Georges Claude, Paris, FR;
Inventors:
Jean-Marc Girard, Versailles, FR;
Peng Zhang, Montvale, NJ (US);
Antonio Sanchez, Tsukuba, JP;
Manish Khandelwal, Somerset, NJ (US);
Gennadiy Itov, Flemington, NJ (US);
Reno Pesaresi, Easton, NJ (US);
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C07F 7/02 (2006.01); C01B 21/087 (2006.01); C01B 21/088 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/515 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C01B 21/087 (2013.01); C01B 21/088 (2013.01); C07F 7/025 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45525 (2013.01); C23C 16/45553 (2013.01); C23C 16/515 (2013.01); H01L 21/02222 (2013.01); H01L 21/02164 (2013.01);
Abstract
Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.