The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2023
Filed:
Jun. 21, 2021
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Moo Hui Park, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/08 (2006.01); G11C 11/4091 (2006.01); G11C 11/408 (2006.01); G11C 11/4074 (2006.01); G11C 11/4094 (2006.01); G11C 11/4099 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4091 (2013.01); G11C 11/4074 (2013.01); G11C 11/4085 (2013.01); G11C 11/4094 (2013.01); G11C 11/4099 (2013.01);
Abstract
A nonvolatile memory apparatus may include a control circuit, a sense amplifier, and a reference generator. The control circuit may apply a read voltage across a target memory cell through a selected global bit line and a selected global word line. The sense amplifier may generate an output signal by comparing voltage levels of the selected global word line and a reference line. The reference generator may change the voltage level of the reference line by charging and discharging a capacitor that is coupled to the reference line.