The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Feb. 25, 2020
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

California Institute of Technology, Pasadena, CA (US);

Inventors:

Seunghoon Han, Seoul, KR;

Amir Arbabi, Pasadena, CA (US);

Andrei Faraon, Pasadena, CA (US);

Sungwoo Hwang, Seoul, KR;

Jangwoo You, Seoul, KR;

Byounglyong Choi, Seoul, KR;

Hyeonsoo Park, Suwon-si, KR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 9/12 (2006.01); G02B 9/14 (2006.01); G02B 13/00 (2006.01); G02B 13/18 (2006.01); G02B 9/10 (2006.01); G02B 5/18 (2006.01); G02B 3/08 (2006.01); G02B 1/00 (2006.01); G02B 27/00 (2006.01); H04N 23/55 (2023.01);
U.S. Cl.
CPC ...
G02B 9/12 (2013.01); G02B 1/002 (2013.01); G02B 3/08 (2013.01); G02B 5/1876 (2013.01); G02B 9/10 (2013.01); G02B 9/14 (2013.01); G02B 13/003 (2013.01); G02B 13/0035 (2013.01); G02B 13/0055 (2013.01); G02B 13/18 (2013.01); G02B 27/0025 (2013.01); H04N 23/55 (2023.01); H05K 999/99 (2013.01); G02B 2207/101 (2013.01);
Abstract

Provided an imaging apparatus including a first optical device, a second optical device disposed such that light transmitted through the first optical device is incident on the second optical device, and a third optical device disposed such that light transmitted through the second optical device is incident on the third optical device, wherein at least one of the first optical device, the second optical device, and the third optical device includes a plurality of nanostructures, and heights of at least two nanostructures of the plurality of nanostructures are different from each other.


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