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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11696494 B1

PDFFull Text
Date of Patent:
Jul. 04, 2023

Filed:

Oct. 15, 2020

Semiconductor device having multiple semiconductor layers

Applicant:

Japan Display Inc., Tokyo, JP;

Inventor:

Satoshi Maruyama, Tokyo, JP;

Assignee:

Japan Display Inc., Tokyo, JP;

Attorney:

Michael Best & Friedrich LLP

Primary Examiner:

Bilkis Jahan

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H10K 85/40 (2023.01); H10K 10/46 (2023.01); H10K 59/123 (2023.01); H10K 59/121 (2023.01); H10K 50/11 (2023.01);
U.S. Cl.
CPC ...
H10K 85/40 (2023.02); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H10K 10/462 (2023.02); H10K 59/123 (2023.02); H10K 59/1213 (2023.02); H10K 59/1216 (2023.02); H01L 27/12 (2013.01); H10K 50/11 (2023.02);
Abstract

A display device having an improved display characteristics and reduced manufacturing cost is provided. The display device includes a plurality of pixels arranged on a surface of a substrate. The plurality of pixels each include: a light-emitting element; a driving transistor; a selecting transistor; and a retention capacitor. The driving transistor has a bottom-gate structure. The driving transistor has a semiconductor layer containing a first semiconductor. The retention capacitor has a first electrode and a second electrode. The first electrode doubles as a gate of the driving transistor. The second electrode is disposed at a lower layer than the first electrode and contains a second semiconductor.

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