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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11696485 B1

PDFFull Text
Date of Patent:
Jul. 04, 2023

Filed:

Sep. 29, 2020

Display device with driving voltage line overlapping gate electrode to form storage capacitor

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Chang Soo Pyon, Seongnam-si, KR;

Ok-Kyung Park, Hwaseong-si, KR;

Se-Ho Kim, Cheonan-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:

Kile Park Reed & Houtteman PLLC

Primary Examiner:

Lex H Malsawma

Int. Cl.
CPC ...
H10K 71/00 (2023.01); H10K 50/11 (2023.01); H10K 50/81 (2023.01); H10K 50/82 (2023.01); H10K 59/123 (2023.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01); H10K 59/121 (2023.01); H10K 59/12 (2023.01);
U.S. Cl.
CPC ...
H10K 71/00 (2023.02); H10K 50/11 (2023.02); H10K 50/81 (2023.02); H10K 50/82 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 59/1216 (2023.02); H10K 59/131 (2023.02); H10K 59/121 (2023.02); H10K 59/1201 (2023.02);
Abstract

A display device includes a substrate, a semiconductor layer on the substrate, the semiconductor layer comprising a first semiconductor portion, a first insulating layer on the semiconductor layer, a first gate electrode on the first insulating layer and overlapping the first semiconductor portion, a scan line disposed on the first insulating layer and extending in a first direction, a second insulating layer on the first gate electrode and the scan line, a data line on the second insulating layer, and a first driving voltage line on the second insulating layer. The first driving voltage line may include a first portion extending in a second direction crossing the first direction, and a second portion expanding from the first portion in the first direction. The first portion may overlap the scan line, and the second portion may overlap the first gate electrode in a plan view to form a storage capacitor.

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