The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Apr. 27, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Beyounghyun Koh, Seoul, KR;

Seungmin Song, Hwaseong-si, KR;

Joongshik Shin, Yongin-si, KR;

Yongjin Kwon, Yongin-si, KR;

Jinhyuk Kim, Hwaseong-si, KR;

Hongik Son, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H10B 43/50 (2023.01); H01L 23/535 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 41/41 (2023.01); H10B 41/50 (2023.01); H10B 43/27 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H10B 43/50 (2023.02); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H01L 23/562 (2013.01); H10B 41/27 (2023.02); H10B 41/41 (2023.02); H10B 41/50 (2023.02); H10B 43/27 (2023.02); H10B 43/40 (2023.02);
Abstract

A semiconductor device includes a substrate having cell array and extension regions, a gate electrode structure having gate electrodes stacked in a first direction, a channel through the gate electrode structure on the cell array region, a first division pattern extending in the second direction on the cell array and extension regions, the first division pattern being at opposite sides of the gate electrode structure in a third direction, an insulation pattern structure partially through the gate electrode structure on the extension region, a through via through the insulation pattern structure, and a support layer on the gate electrode structure and extending on the cell array and extension regions, the support layer contacting an upper sidewall of the first division pattern, and the support layer not contacting an upper surface of a portion of the first division pattern on the extension region adjacent to the insulation pattern structure.


Find Patent Forward Citations

Loading…