The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Jul. 14, 2020
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventor:
François Tailliet, Fuveau, FR;
Assignee:
STMicroelectronics (Rousset) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H10B 41/00 (2023.01); H01L 29/423 (2006.01); G11C 7/18 (2006.01); H01L 29/66 (2006.01); G11C 16/04 (2006.01); H01L 21/28 (2006.01); G11C 16/08 (2006.01); G11C 16/24 (2006.01); H10B 41/35 (2023.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H10B 41/00 (2023.02); G11C 7/18 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); H01L 29/40114 (2019.08); H01L 29/4236 (2013.01); H01L 29/42324 (2013.01); H01L 29/42328 (2013.01); H01L 29/42336 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/66825 (2013.01); H10B 41/35 (2023.02); H01L 29/7881 (2013.01);
Abstract
An EEPROM memory integrated circuit includes memory cells arranged in a memory plane. Each memory cell includes an access transistor in series with a state transistor. Each access transistor is coupled, via its source region, to the corresponding source line and each state transistor is coupled, via its drain region, to the corresponding bit line. The floating gate of each state transistor rests on a dielectric layer having a first part with a first thickness, and a second part with a second thickness that is less than the first thickness. The second part is located on the source side of the state transistor.