The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Jun. 18, 2019
Applicant:

Abb Schweiz Ag, Baden, CH;

Inventors:

Arun Kadavelugu, Raleigh, NC (US);

Eddy Aeloiza, Apex, NC (US);

Assignee:

ABB Schweiz AG, Baden, CH;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H03K 17/082 (2006.01); H02H 7/20 (2006.01); H01L 29/20 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/082 (2013.01); H02H 7/205 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01);
Abstract

Systems, methods, techniques and apparatuses of a semiconductor control system are disclosed. One exemplary embodiment is a method for protecting a semiconductor switch comprising receiving a first voltage during a second blanking period following a first blanking period; determining whether a short circuit fault is occurring by comparing the first voltage to a fast detection threshold corresponding to a first value of a drain-source voltage of the semiconductor switch; if a short circuit is not occurring: receiving a second voltage after the second blanking period ends; determining whether a short circuit fault is occurring by comparing the second voltage to a slow detection threshold corresponding to a second value of the drain-source voltage; and if a short circuit fault is occurring, opening the semiconductor switch, wherein the first value of the drain-source voltage is greater than the second value of the drain-source voltage.


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