The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Aug. 10, 2022
Applicant:

Qorvo Biotechnologies, Llc, Plymouth, MN (US);

Inventors:

Matthew Ryder, Bend, OR (US);

Rio Rivas, Bend, OR (US);

Thayne Edwards, Bend, OR (US);

Assignee:

Qorvo Biotechnologies, LLC, Plymouth, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/02 (2006.01); G01N 29/02 (2006.01); G01N 29/036 (2006.01); G01N 33/536 (2006.01); H03H 3/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/15 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02015 (2013.01); G01N 29/022 (2013.01); G01N 29/036 (2013.01); G01N 33/536 (2013.01); H03H 3/02 (2013.01); H03H 9/131 (2013.01); H03H 9/175 (2013.01); G01N 2291/0255 (2013.01); G01N 2291/0256 (2013.01); G01N 2291/0426 (2013.01); H03H 2003/027 (2013.01); H03H 2009/155 (2013.01);
Abstract

A micro-electrical-mechanical system (MEMS) resonator device includes at least one functionalization material arranged over at least a central portion, but less than an entirety, of a top side electrode. For an active region exhibiting greatest sensitivity at a center point and reduced sensitivity along its periphery, omitting functionalization material over at least one peripheral portion of a resonator active region prevents analyte binding in regions of lowest sensitivity. The at least one functionalization material extends a maximum length in a range of from about 20% to about 95% of an active area length and extends a maximum width in a range of from about 50% to 100% of an active area width. Methods for fabricating MEMS resonator devices are also provided.


Find Patent Forward Citations

Loading…