The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Jan. 19, 2021
Applicant:
Glo Ab, Lund, SE;
Inventor:
Zhen Chen, Dublin, CA (US);
Assignee:
NANOSYS, INC., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01L 25/16 (2023.01); H01L 23/00 (2006.01); H01L 33/60 (2010.01); H01L 33/32 (2010.01); H01L 33/62 (2010.01); H01L 33/42 (2010.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 25/167 (2013.01); H01L 33/60 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 33/0093 (2020.05); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 33/62 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03849 (2013.01); H01L 2224/05082 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05181 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05611 (2013.01); H01L 2224/05669 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/8181 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0083 (2013.01);
Abstract
A light emitting diode (LED) includes a n-doped semiconductor material layer, a p-doped semiconductor material layer, an active region disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, and a photonic crystal grating configured to increase the light extraction efficiency of the LED.