The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
May. 17, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Ze Chen, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided are a semiconductor device in which the lifetime of holes is controlled and the switching loss is suppressed, and a method of manufacturing the same. Provided are a semiconductor substrate having a drift layer of a first conductivity type between a first main surface and a second main surface opposite to the first main surface, a first buffer layer of the first conductive type provided between the drift layer and the second main surface in contact with the drift layer, having a resistivity lower than that of the drift layer, and having an impurity concentration higher than that of the drift layer, and a high resistivity layer provided between the first buffer layer and the second main surface and having a resistivity higher than that of the drift layer.