The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Jul. 08, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sahwan Hong, Yongin-si, KR;

Hanki Lee, Hwaseong-si, KR;

Jeongmin Lee, Gyeongju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/167 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 29/775 (2006.01); B82Y 10/00 (2011.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/167 (2013.01); H01L 29/0847 (2013.01); H01L 29/41775 (2013.01);
Abstract

A semiconductor device includes an active region on a substrate, a gate structure on the substrate and intersecting the active region, a source/drain region on the active region on both sides of the gate structure and including silicon (Si), and a contact structure on the source/drain region. The source/drain region includes a shallow doping region doped with germanium (Ge) and is in an upper region including an upper surface of the source/drain region. A concentration of germanium (Ge) in the shallow doping region gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a direction that is perpendicular to an upper surface of the substrate.


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