The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Dec. 18, 2017
Semiconductor manufacturing parts comprising sic deposition layer, and manufacturing method therefor
Applicant:
Tokai Carbon Korea Co., Ltd., Anesong-si, KR;
Inventors:
Assignee:
TOKAI CARBON KOREA CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/687 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02529 (2013.01); H01L 21/0262 (2013.01); H01L 21/68771 (2013.01); H01L 29/1608 (2013.01);
Abstract
The present invention relates to semiconductor manufacturing parts used in a dry etching process. Semiconductor manufacturing parts comprising a SiC deposition layer, of the present invention, comprises: a base material; and a SiC deposition layer formed on the surface of the base material, wherein the thickness ratio of the base material and the SiC deposition layer is 2:1 to 100:1.