The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Nov. 18, 2020
Applicant:

Seung-hwan Song, Palo Alto, CA (US);

Inventor:

Seung-Hwan Song, Palo Alto, CA (US);

Assignee:

SEMIBRAIN INC., Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01); G11C 16/3459 (2013.01);
Abstract

A selective non-volatile memory programming method for a selected memory cell in a memory array is described so as to reduce or avoid program disturbance on an unselected memory cell. This selective programming method comprises: applying a programming pulse to a selected memory cell to be programmed and an unselected memory cell, wherein the programming pulse allows a change of the unselected memory cell within a range specified; boosting a region of the unselected memory cell; and setting a threshold time of the programming pulse, wherein the threshold time is defined when an absolute magnitude of a voltage difference between a floating gate of the unselected memory cell and the boosted region of the unselected memory cell reaches a threshold value defined.


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