The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Nov. 20, 2020
Applicants:

Western Digital Technologies, Inc., San Jose, CA (US);

Tokyo Institute of Technology, Tokyo, JP;

Inventors:

Quang Le, San Jose, CA (US);

Cherngye Hwang, San Jose, CA (US);

Brian R. York, San Jose, CA (US);

Thao A. Nguyen, San Jose, CA (US);

Zheng Gao, San Jose, CA (US);

Kuok San Ho, Emerald Hills, CA (US);

Pham Nam Hai, Tokyo, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/11 (2006.01); H01F 10/32 (2006.01); G11B 5/147 (2006.01); H10N 50/85 (2023.01); H10N 52/80 (2023.01); H10B 61/00 (2023.01); H10N 52/00 (2023.01); G11B 5/00 (2006.01);
U.S. Cl.
CPC ...
G11B 5/11 (2013.01); G11B 5/147 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02); G11B 2005/0024 (2013.01);
Abstract

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.


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