The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

Nov. 30, 2021
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Makoto Utsumi, Matsumoto, JP;

Masaki Miyazato, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); H01L 29/16 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2621 (2013.01); H01L 27/0255 (2013.01); H01L 29/1608 (2013.01);
Abstract

A body diode is energized by inputting a BD energization pulse signal having a predetermined cycle. At the start of energization of the body diode and immediately before termination thereof, an ON signal of a Von measurement pulse signal is input to a high-temperature semiconductor chip at a timing different from that of an ON signal of the BD energization pulse signal, thereby passing a drain-source current through a MOSFET, and a drain-source voltage is measured. Thereafter, energization of the body diode is terminated. At room temperature before and after the energization of the body diode, the drain-source voltage is measured by inputting the ON signal of the Von measurement pulse signal. A semiconductor chip for which a fluctuation amount of the drain-source voltage at a high temperature and a fluctuation amount of the drain-source voltage at room temperature are within predetermined ranges is determined to be a conforming product.


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