The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2023

Filed:

May. 10, 2022
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Takuji Okahisa, Itami, JP;

Yoshiyuki Yamamoto, Itami, JP;

Yoshiki Nishibayashi, Itami, JP;

Natsuo Tatsumi, Itami, JP;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/01 (2006.01); C23C 16/27 (2006.01); C30B 29/04 (2006.01); C23C 16/56 (2006.01); C23C 16/02 (2006.01); C01B 32/25 (2017.01); H01L 21/762 (2006.01); C30B 33/06 (2006.01); C01B 32/26 (2017.01); C23C 14/48 (2006.01); C30B 25/20 (2006.01); C30B 33/02 (2006.01); C30B 33/10 (2006.01); C30B 25/18 (2006.01);
U.S. Cl.
CPC ...
C23C 16/01 (2013.01); C01B 32/25 (2017.08); C01B 32/26 (2017.08); C23C 14/48 (2013.01); C23C 16/02 (2013.01); C23C 16/27 (2013.01); C23C 16/271 (2013.01); C23C 16/274 (2013.01); C23C 16/56 (2013.01); C30B 25/20 (2013.01); C30B 29/04 (2013.01); C30B 33/02 (2013.01); C30B 33/06 (2013.01); C30B 33/10 (2013.01); H01L 21/76254 (2013.01); C30B 25/18 (2013.01);
Abstract

A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.


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