The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Feb. 21, 2020
Applicant:
Raytheon Technologies Corporation, Farmington, CT (US);
Inventors:
Ying She, East Hartford, CT (US);
Nitin Garg, West Hartford, CT (US);
Andrew J. Lazur, Laguna Beach, CA (US);
Olivier H. Sudre, Glastonbury, CT (US);
Assignee:
RAYTHEON TECHNOLOGIES CORPORATION, Farmington, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B 35/80 (2006.01); C04B 35/628 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C04B 35/80 (2013.01); C04B 35/62863 (2013.01); C04B 35/62884 (2013.01); C23C 16/045 (2013.01); C23C 16/45557 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/5244 (2013.01); C04B 2235/5252 (2013.01); C04B 2235/614 (2013.01);
Abstract
Disclosed herein is a chemical vapor infiltration method including flowing ceramic precursors through a preform and depositing a matrix material on the preform at a first gas infiltration pressure, increasing the gas filtration pressure to a second gas infiltration pressure, and lowering the gas infiltration pressure to a third gas infiltration pressure which is intermediate to the first and second gas infiltration pressures.