The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2023
Filed:
Jan. 31, 2019
China Petroleum & Chemical Corporation, Beijing, CN;
China Petroleum & Chemical Corporation Qingdao Research Institute of Safety Engineering, Qingdao, CN;
Jing Zhang, Qingdao, CN;
Shanjun Mu, Qingdao, CN;
Wei Xu, Qingdao, CN;
Ning Shi, Qingdao, CN;
Shucai Zhang, Qingdao, CN;
Guosheng Dong, Qingdao, CN;
Tie Zhang, Qingdao, CN;
Lin Wang, Qingdao, CN;
Junpeng Ren, Qingdao, CN;
Feng Sun, Qingdao, CN;
Abstract
Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first cavity; an outer electrode; and a barrier dielectric arranged between the outer electrode and the inner electrode. The hydrogen sulfide decomposition method includes: implementing dielectric barrier discharge at the outer electrode and the inner electrode of the low temperature plasma reaction device, introducing a raw material gas containing hydrogen sulfide into the first cavity to implement a hydrogen sulfide decomposition method, and continuously introducing a thermally conductive medium into the second cavity in order to control the temperature of the first cavity of the low temperature plasma reaction device.