The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Dec. 09, 2020
Applicants:

Samsung Display Co., Ltd., Yongin-si, KR;

Industry-academic Cooperation Foundation, Yonsei University, Seoul, KR;

Inventors:

Tae Sang Kim, Seoul, KR;

Hyun Jae Kim, Seoul, KR;

Hyuk Joon Yoo, Seoul, KR;

Jun Hyung Lim, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10K 59/60 (2023.01); H01L 31/032 (2006.01); H10K 59/12 (2023.01); H10K 59/40 (2023.01); H01L 31/0368 (2006.01); H01L 31/0376 (2006.01); H01L 31/113 (2006.01); H10K 50/844 (2023.01); G06F 3/041 (2006.01); H10K 50/11 (2023.01);
U.S. Cl.
CPC ...
H10K 59/60 (2023.02); H01L 31/032 (2013.01); H01L 31/03682 (2013.01); H01L 31/03762 (2013.01); H01L 31/1136 (2013.01); H10K 50/844 (2023.02); H10K 59/12 (2023.02); H10K 59/40 (2023.02); G06F 3/0412 (2013.01); H10K 50/11 (2023.02);
Abstract

A photo transistor and a display device employing the photo transistor are provided. The photo transistor includes a gate electrode disposed on a substrate, a gate insulating layer that electrically insulates the gate electrode, a first active layer overlapping the gate electrode and including metal oxide, wherein the gate insulating layer is disposed between the gate electrode and the active layer, a second active layer disposed on the first active layer and including selenium, and a source electrode and a drain electrode respectively electrically connected to the second active layer.


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