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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11690248 B1

PDFFull Text
Date of Patent:
Jun. 27, 2023

Filed:

Dec. 30, 2020

Light emitting display device including hydrogen or oxygen absorbing layer

Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Yeon Kim, Seoul, KR;

Goeun Kim, Incheon, KR;

HyeonTae Seo, Goyang-si, KR;

Eunjin Kim, Gunpo-si, KR;

Jungyeon Kim, Seoul, KR;

JinHo Kim, Paju-si, KR;

Tae-Hoon Kim, Goyang-si, KR;

KyoungHoon Kim, Paju-si, KR;

KwangSeon Lee, Paju-si, KR;

Hongdae Shin, Paju-si, KR;

Assignee:

LG DISPLAY CO., LTD., Seoul, KR;

Attorney:

Polsinelli PC

Primary Examiner:

Ida M Soward

Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/10 (2006.01); H01L 51/44 (2006.01); H01L 27/32 (2006.01); H10K 50/84 (2023.01); H10K 50/844 (2023.01); H10K 10/88 (2023.01); H10K 30/88 (2023.01); H10K 50/818 (2023.01); H10K 50/86 (2023.01); H10K 50/842 (2023.01); H10K 59/35 (2023.01); H10K 59/38 (2023.01); H10K 59/122 (2023.01); H10K 59/124 (2023.01); H10K 102/00 (2023.01);
U.S. Cl.
CPC ...
H10K 50/846 (2023.02); H10K 50/844 (2023.02); H10K 10/88 (2023.02); H10K 30/88 (2023.02); H10K 50/818 (2023.02); H10K 50/84 (2023.02); H10K 50/8426 (2023.02); H10K 50/865 (2023.02); H10K 59/122 (2023.02); H10K 59/124 (2023.02); H10K 59/35 (2023.02); H10K 59/351 (2023.02); H10K 59/353 (2023.02); H10K 59/38 (2023.02); H10K 2102/00 (2023.02);
Abstract

A light emitting display device includes a lower substrate, a thin film transistor on the lower substrate, a passivation layer disposed on the thin film transistor and including hydrogen, an overcoating layer disposed on the passivation layer and planarizing the passivation layer, a light emitting element disposed on the overcoating layer and including an anode, a light emitting layer on the anode, and a cathode on the light emitting layer, a bank disposed on the overcoating layer and defining a light emitting area, an adhesive layer on the light emitting element and the bank, and a hydrogen absorbing layer disposed on the adhesive layer and including a hydrogen absorbing filler, wherein a side end of the bank is disposed more inwardly than side ends of the adhesive layer and the hydrogen absorbing layer, wherein the side ends of the adhesive layer and the hydrogen absorbing layer are disposed more inwardly than a side end of the overcoating layer.

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