The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Dec. 13, 2019
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Roozbeh Tabrizian, Gainesville, FL (US);
University of Florida Research Foundation, Incorporated, Gainesville, FL (US);
Abstract
An acoustic waveguide having high-Q resonator characteristics is disclosed and a fabrication method is described. Various waveguide-based test-vehicles, implemented in single crystal silicon and transduced by thin aluminum nitride films, are demonstrated. Silicon resonators with type-I and type-II dispersion characteristics are presented to experimentally justify the analytical mode synthesis technique for realization of high quality-factor silicon Lamb wave resonators. An analytical design procedure is also presented for geometrical engineering of the waveguides to realize high-Q resonators without the need for geometrical suspension through narrow tethers or rigid anchors. The effectiveness of the dispersion engineering methodology is verified through development of experimental test-vehicles in 20 μm-thick single-crystal silicon (SCS) waveguides with 500 nm aluminum nitride transducers.