The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Sep. 18, 2017
Tampere University Foundation Sr., Tampere, FI;
Arto Aho, Lempäälä, FI;
Riku Isoaho, Tampere, FI;
Antti Tukiainen, Tampere, FI;
Mircea Dorel Guina, Tampere, FI;
Jukka Viheriälä, Lempäälä, FI;
Tampere University Foundation, sr., Tampere, FI;
Abstract
A semiconductor device includes a substrate comprising a layer made of Ge and a semiconductor multilayer structure grown on the layer made of Ge. The semiconductor multilayer structure includes at least one first layer comprising a material selected from a group consisting of AlGaAs, AlGaInAs, AlGaInAsP, AlGaInAsN, and AlGaInAsNP, AlGaInAsNSb, and AlGaInAsPSb, wherein for any material a sum of the contents of all group-III elements equals 1 and a sum of the contents of all group-V elements equals 1. The semiconductor multilayer structure also includes at least one second layer comprising a material selected from a group consisting of GaInAsNSb, GaInAsN, AlGaInAsNSb, AlGaInAsN, GaAs, GaInAs, GaInAsSb, GaInNSb, GaInP, GaInPNSb, GaInPSb, GaInPN, AlInP, AlInPNSb, AlInPN, AlInPSb, AlGaInP, AlGaInPNSb, AlGaInPN, AlGaInPSb, GaInAsP, GaInAsPNSb, GaInAsPN, GaInAsPSb, GaAsP, GaAsPNSb, GaAsPN, GaAsPSb, AlGaInAs and AlGaAs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile