The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Jun. 18, 2018
Applicant:
Kabushiki Kaisha Toyota Jidoshokki, Kariya, JP;
Inventor:
Yasuhiro Yamaguchi, Kariya, JP;
Assignee:
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, Kariya, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01M 4/485 (2010.01); H01M 4/587 (2010.01); H01M 10/0525 (2010.01); C01B 33/26 (2006.01); H01M 4/36 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/485 (2013.01); C01B 33/26 (2013.01); H01M 4/366 (2013.01); H01M 4/587 (2013.01); H01M 10/0525 (2013.01); C01P 2002/52 (2013.01); C01P 2002/74 (2013.01); C01P 2002/85 (2013.01); C01P 2002/88 (2013.01); C01P 2006/40 (2013.01); H01M 2004/027 (2013.01);
Abstract
A new silicon material is provided. A negative electrode active material including an Al- and O-containing silicon material, the Al- and O-containing silicon material being configured such that a mass % of Al (W%) satisfies 0<W<1, and a peak indicating Al—O bond is observed in a range of 1565 to 1570 eV in an X-ray absorption fine structure measurement for a K shell of Al.