The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Aug. 31, 2020
Applicants:

Industrial Technology Research Institute, Hsinchu, TW;

Opto Tech Corp., Hsinchu, TW;

Inventors:

Chia-Yen Huang, Taipei, TW;

Chang Da Tsai, Hsinchu, TW;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/02 (2010.01); H01L 33/04 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); H01L 33/025 (2013.01); H01L 33/12 (2013.01); H01L 33/007 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/325 (2013.01);
Abstract

A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of the strain release layer includes AlGaN, where 0≤x<0.15. The strain release layer is doped with silicon to release a compressive strain due to the buffer layer. A concentration of silicon doped in the strain release layer is greater than 10cm. A defect density of the strain release layer is less than or equal to 5×10/cm. A light-emitting diode is also provided.


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