The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Sep. 06, 2019
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Mami Fujihara, Nakatsu Oita, JP;

Yoshio Noguchi, Kitakyushu Fukuoka, JP;

Naoya Takai, Yukuhashi Fukuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/167 (2006.01); H01L 31/02 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2023.01); H01L 23/495 (2006.01); H01L 33/30 (2010.01); H01L 33/62 (2010.01); H01L 33/40 (2010.01); H01L 33/42 (2010.01);
U.S. Cl.
CPC ...
H01L 31/167 (2013.01); H01L 23/3121 (2013.01); H01L 23/49513 (2013.01); H01L 23/49575 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 25/167 (2013.01); H01L 31/02005 (2013.01); H01L 31/02019 (2013.01); H01L 24/45 (2013.01); H01L 33/30 (2013.01); H01L 33/405 (2013.01); H01L 33/42 (2013.01); H01L 33/62 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/32502 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12043 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A photocoupler of an embodiment includes an input terminal, an output terminal, a first MOSFET, a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, and a resin layer. The first MOSFET is joined onto the third lead. The second MOSFET is joined onto the fourth lead. The semiconductor light receiving element is joined to each of the first junction region and the second junction region. The semiconductor light receiving element includes a light receiving region provided in a central part of a surface on opposite side from a surface joined to the first and second MOSFET. The resin layer seals the first and second MOSFETs, the semiconductor light receiving element, the semiconductor light emitting element, an upper surface and a side surface of the input terminal, and an upper surface and a side surface of the output terminal.


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