The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Sep. 29, 2021
Applicant:
Henry Meyer Daghighian, Redwood City, CA (US);
Inventor:
Henry Meyer Daghighian, Redwood City, CA (US);
Assignee:
Other;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/117 (2006.01); H01L 31/0203 (2014.01); G01T 1/24 (2006.01); H01L 31/0304 (2006.01); H01L 31/0296 (2006.01); H01L 31/024 (2014.01);
U.S. Cl.
CPC ...
H01L 31/117 (2013.01); G01T 1/244 (2013.01); H01L 31/0203 (2013.01); H01L 31/024 (2013.01); H01L 31/02966 (2013.01); H01L 31/0304 (2013.01);
Abstract
In an example, a wireless gamma and or hard X-ray radiation detector includes a bulk semiconductor crystal, electrical contacts, a bias circuit, and a terahertz (THz) electromagnetic (EM) wave receiver. The bulk semiconductor crystal and includes indium antimonide (InSb), cadmium telluride (CdTe), or cadmium zinc telluride (CdZnTe). The electrical contacts are coupled to two facets of the bulk semiconductor crystal. The bias circuit is electrically coupled to the bulk semiconductor crystal through the electrical contacts. The THz EM wave receiver is positioned to detect THz radiation emitted by the bulk semiconductor crystal.