The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Jan. 26, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seung Mo Kang, Suwon-si, KR;
Moon Seung Yang, Suwon-si, KR;
Jongryeol Yoo, Suwon-si, KR;
Sihyung Lee, Suwon-si, KR;
Sunguk Jang, Suwon-si, KR;
Eunhye Choi, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a channel pattern including first and second semiconductor patterns stacked on a substrate, a gate electrode covering top and lateral surfaces of the channel pattern and extending in a first direction, and including a first gate segment between the first semiconductor pattern and the second semiconductor pattern, a gate spacer covering a lateral surface of the gate electrode and including an opening exposing the channel pattern, and a first source/drain pattern on a side of the gate spacer and in contact with the channel pattern through the opening, the first source/drain pattern including a sidewall center thickness at a height of the first gate segment and at a center of the opening, and a sidewall edge thickness at the height of the first gate segment and at an edge of the opening, the sidewall edge thickness being about 0.7 to 1 times the sidewall center thickness.