The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Dec. 06, 2019
Suzhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;
Yi Gong, Jiangsu, CN;
Wei Liu, Jiangsu, CN;
Lei Liu, Jiangsu, CN;
Zhendong Mao, Jiangsu, CN;
Xin Wang, Jiangsu, CN;
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Abstract
Provided is an IGBT device. The IGBT device includes an MOSFET cell array, where each MOSFET cell includes a p-type body region located at the top of an n-type drift region, an n-type emitter region located in the p-type body region, and a gate dielectric layer, a gate electrode and an n-type floating gate which are located above the p-type body region. The gate electrode is located above the gate dielectric layer, the n-type floating gate is located above the gate dielectric layer, and the gate electrode acts on the n-type floating gate through capacitive coupling. The n-type floating gate of at least one MOSFET cell is isolated from the p-type body region through the gate dielectric layer, and the n-type floating gate of at least one MOSFET cell contacts the p-type body region through an opening in the gate dielectric layer to form a p-n junction diode.