The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

May. 03, 2022
Applicant:

Key Foundry Co., Ltd., Cheongju-si, KR;

Inventors:

Hyun Kwang Shin, Cheongju-si, KR;

Jung Hwan Lee, Cheongju-si, KR;

Assignee:

KEY FOUNDRY CO., LTD., Cheongju-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/86 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66674 (2013.01); H01L 29/0646 (2013.01); H01L 29/86 (2013.01);
Abstract

A semiconductor device is disclosed. A semiconductor device according to an example of the present disclosure includes a gate electrode of a ring shape having an opening area on a substrate; a P-type deep well region formed in the opening area; a drain region formed on the P-type deep well region; an N-type well region overlapping with the gate electrode; a source region formed in the N-type well region; a bulk tab region formed by being isolated from the source region by a first isolation region; a P-type drift region formed in contact with the N-type well region; and a second isolation region formed near the bulk tab region.


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