The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2023
Filed:
Dec. 01, 2021
Applicant:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Inventor:
Praveen Shenoy, Chandler, AZ (US);
Assignee:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 29/0696 (2013.01); H01L 29/1033 (2013.01); H01L 29/42368 (2013.01); H01L 21/266 (2013.01);
Abstract
A method for increasing a forward biased safe operating area of a device includes forming a gate; and forming a segmented source close to the gate, wherein the segmented source includes first segments associated with a first threshold voltage and second segments associated with a second threshold voltage different from the first threshold voltage, wherein at least one device characteristic associated with the first segments is different from the same device characteristic associated with the second segments.