Semiconductor device, manufacturing method, imaging element, and electronic device

Abstract

The present disclosure relates to a semiconductor device, a manufacturing method, an imaging element, and an electronic device capable of reducing manufacturing steps in a stacked structure obtained by stacking two or more semiconductor substrates. The semiconductor device has a stacked structure obtained by stacking at least a first semiconductor substrate in which a first wiring layer is stacked on a first semiconductor layer and a second semiconductor substrate in which a second wiring layer is stacked on a second semiconductor layer. Then, a through via which electrically connects the first semiconductor substrate and the second semiconductor substrate to each other and penetrates at least the first semiconductor layer is formed in an embedded oxide film formed when element isolation of a semiconductor element formed in the first semiconductor layer is performed. The present technology is applicable to, for example, a stacked semiconductor device.