Solid-state imaging device configured by electrically bonding the respective electrodes of a plurality of semiconductor chips

Abstract

An imaging device includes a first chip (). The first chip includes first and second pixels including respective first and second photoelectric conversion regions (PD) that convert incident light into electric charge. The first chip includes a first connection region for bonding the first chip to a second chip () and including a first connection portion () overlapped with the first photoelectric conversion region in a plan view, and a second connection portion overlapped with the second photoelectric conversion region in the plan view. The first photoelectric region receives incident light of a first wavelength, and the second photoelectric conversion region receives incident light of a second wavelength that is greater than the first wavelength. The first connection portion overlaps an area of the first photoelectric conversion region that is larger than an area of the second photoelectric conversion region overlapped by the second connection portion.