The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Aug. 13, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jung Ho Do, Hwaseong-si, KR;

Seung Hyun Song, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 29/41741 (2013.01); H01L 29/42356 (2013.01); H01L 29/7827 (2013.01); H01L 29/7828 (2013.01); H01L 21/823487 (2013.01); H10B 63/34 (2023.02);
Abstract

Integrated circuit devices including standard cells are provided. The standard cells may include a first vertical field effect transistor (VFET) including a first channel region and having a first conductivity type and a second VFET including a second channel region and having a second conductivity type that is different from the first conductivity type. Each of the first channel region and the second channel region may extend longitudinally in a first horizontal direction, and the first channel region may be spaced apart from the second channel region in a second horizontal direction that is perpendicular to the first horizontal direction.


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