The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Aug. 17, 2020
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Daisuke Okabayashi, Yokohama, JP;

Tetsuo Takahashi, Kawasaki, JP;

Takashi Usui, Ashigarakami-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 1/16 (2006.01); H10K 59/124 (2023.01); B60K 35/00 (2006.01); H10K 59/65 (2023.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
G06F 1/1605 (2013.01); B60K 35/00 (2013.01); H01L 27/3234 (2013.01); H01L 27/3258 (2013.01); B60K 2370/1523 (2019.05);
Abstract

A semiconductor apparatus include a first electrode, an insulating layer covering an end of the first electrode, a functional layer arranged on the first electrode and the insulating layer, and a second electrode arranged above the functional layer, wherein, in a cross-section passing through the insulating layer, and the first electrode, the insulating layer includes a first portion having a side surface inclining at an angle of 45° or more and 90° or less, a second portion having a side surface inclining at an angle smaller than 45°, and a third portion below the first portion, and having a side surface inclining at an angle smaller than 45°, and wherein a length of the second portion in a direction vertical to the first electrode is larger than that of the third portion.


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